The PHN203 IC is a compact dual N-channel MOSFET designed for efficient switching and amplification applications. Encased in an ultra-small SOT-363 package, it offers high-speed switching, low on-resistance, and low power consumption, making it ideal for portable and battery-powered devices.
Key Features:
- Dual N-Channel MOSFET – Two MOSFETs integrated into a single package for space-saving design.
- Low On-Resistance (Rds ON) – Ensures efficient power transfer with minimal loss.
- High-Speed Switching – Suitable for fast switching applications in digital circuits.
- Compact SOT-363 Package – Ideal for surface-mount PCB designs.
- Low Gate Drive Voltage – Compatible with low-voltage logic controllers and microcontrollers.
Applications:
- Power management circuits
- Load switching applications
- Signal amplification
- Battery-powered devices
- DC-DC converters
Specifications:
- Transistor Type: Dual N-Channel MOSFET
- Package Type: SOT-363 (Surface Mount)
- Drain-Source Voltage (Vds): Up to 20V
- Continuous Drain Current (Id): 0.5A
- Gate Threshold Voltage (Vgs): 0.4V – 1.5V
- Power Dissipation: 230mW
The PHN203 IC is an excellent choice for compact electronic circuits requiring efficient MOSFET switching. Order now to enhance your power management and switching applications!
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