The IRF5305 MOSFET is a high-performance P-Channel HEXFET power transistor housed in a TO-220 package. Designed for high current and low voltage switching applications, this MOSFET offers excellent thermal performance, low on-resistance, and fast switching capabilities. It is ideal for use in automotive circuits, power supply designs, and motor control systems.
Key Features
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P-Channel MOSFET with 55V drain-to-source voltage
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Continuous drain current of up to 31A
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Low R<sub>DS(on)</sub> of 0.060 Ohm max for efficient switching
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TO-220 package for easy heatsink mounting and thermal dissipation
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Fast switching speed and low gate charge for improved performance
Technical Details
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Product Name: IRF5305 MOSFET
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Transistor Type: P-Channel HEXFET
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Package: TO-220
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Drain-to-Source Voltage (V<sub>DS</sub>): -55V
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Continuous Drain Current (I<sub>D</sub>): -31A at 25°C
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Pulsed Drain Current: -110A
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Gate-to-Source Voltage (V<sub>GS</sub>): ±20V
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R<sub>DS(on)</sub>: 0.060 Ohm max @ V<sub>GS</sub> = -10V
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Power Dissipation: 110W
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Gate Charge (Qg): 67nC typical
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Input Capacitance (C<sub>iss</sub>): 1700pF
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Operating Temperature Range: -55°C to +175°C
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RoHS Compliant: Yes
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Length (Height including leads): 29.5 mm
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Width (Body): 10.2 mm
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Height (Body only): 15.6 mm
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Thickness (Body): 4.5 mm
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Lead Pitch: 2.54 mm (standard spacing between pins)
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Hole Diameter (for mounting): 3.6 mm
Applications
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Automotive electronic circuits
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Power inverters and converters
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DC-DC switching power supplies
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Load switching and reverse polarity protection
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Battery-powered and portable devices
Why Choose the IRF5305 MOSFET?
The IRF5305 MOSFET delivers high current handling capability and low conduction losses, making it a preferred solution for high-efficiency power management designs. Its rugged TO-220 package ensures ease of installation and effective heat dissipation. Ideal for engineers, students, and hobbyists working with high-power DC circuits and switching regulators.
Package Includes
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1 x IRF5305 MOSFET TO-220 P-Channel 55V 31A HEXFET Transistor
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